SINANO Modelling Summer School

Invited speakers

Prof. Tibor Grasser

Prof. Tibor Grasser is an IEEE Fellow and has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier). Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments. 

Dr. Kurt Stokbro

Dr Kurt Stokbro, born 1965, is an internationally recognized researcher and serial entrepreneur. He is director of Synopsys Denmark and responsible for the atomic-scale simulation activities within Synopsys. He is founder of QuantumWise A/S which in 2017 was acquired by Synopsys. He has previously held a professorship at Copenhagen University and positions at Technical University of Denmark, where he has coordinated a number of EU and Danish-funded R&D projects. Dr. Stokbro has published more than 80 papers and review articles in international journals with +7500 citations and a h-index of 34. He has held a large number of lectures as invited speaker and has organised 3 international conferences in nanoscience. The scheme for ab initio calculations of quantum transport, developed by Dr. Stokbro and co-workers, has become the de facto standard for electron transport calculations and has laid the foundation for QuantumWise A/S and Atomistix A/S.

Jean-Pierre Raskin

Jean-Pierre Raskin received the M.S. and Ph.D. degrees in applied sciences from Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 1994 and 1997, respectively. He has been a Professor and the head of the Electrical Engineering Department of UCL since 2000 and 2014, respectively. His research interests are the modeling, wideband characterization and fabrication of advanced SOI MOSFETs as well as micro and nanofabrication of MEMS / NEMS sensors and actuators, including the extraction of intrinsic material properties at nanometer scale. He has been IEEE Fellow since 2014. He was the recipient of the Médaille BLONDEL 2015, the SOI Consortium Award 2016 and the European SEMI Award 2017 in recognition in his vision and pioneering work for RF SOI.

François Danneville

François Danneville received the PhD in Electronics and the « Habilitation à Diriger les Recherches » from Lille1 University, Sciences and Technology, in 1991 and 1999, respectively. Until 2000, as Assistant Professor at Lille1 University, he has studied the noise of III-V devices operating in linear and nonlinear operation (in LNA, Mixer and Oscillator). In 1998, on the aforementioned research topic, he made one year sabbatical as Visitor Scientist in HP (nowadays Keysight Technologies), Santa Rosa (USA). Since 2001, he has been Full Professor at Lille1 University where his research has focused on the small (large) signal and noise properties in high frequency range (centimeter and millimeter waves) of advanced Silicon Technologies (CMOS and SiGe HBTs), including alternative architectures and circuits design. In these areas, Professor François Danneville has published over 140 papers in international journals and conferences and has supervised 22 PhD students (2 on-going). Since 2014, his research work has focused also on the development of an ultra-low power silicon CMOS artificial neuron (published in Frontiers in Neuroscience –March 2017-) and is currently focusing on the integration (scaling) of this new neuromorphic technology within neural networks. His research areas of interest (to cite a few) are: - Biocomputing - Smart Visual and Hearing Sensors - Electronic systems for Neural recording and stimulation - fluctuations and noise in artificial and biologic neural systems.

Thyerry Ferrus

Dr. Thierry Ferrus has been working in the field of semiconductors and nanostructures for more than 20 years, specialising himself in transport measurements at low temperatures and developing expertise around single dopants and impurities, electron-electron interaction, disorder as well as microwave-induced effects in silicon nanostructures and fast cryogenic measurements. After obtaining his PhD from the Institut National des Sciences Appliquées and University of Paul Sabatier in Toulouse, France in 1999, he took a position at the University of Cambridge to work with Prof. Sir Michael Pepper on Metal-Oxide-Semiconductor based architectures for quantum information. He then moved to the Microelectronics Research Centre, still at the Cambridge Department of Physics to study microwave excitation of donors in quantum dots in 2006. He was offered a permanent position at the Hitachi Cambridge Laboratory (HCL) in 2007 to carry out further experimental research in quantum information using silicon platforms. At HCL he is also responsible for the infrastructure management and the laboratory development within the department. Qualified as a lecturer, Dr Ferrus has been involved in a wide range of teaching activities over the years, including engineering schools, technical high schools, and secondary schools in France, as well as at the University of Cambridge and Cambridge Colleges. He has mentored numerous students and PhDs. He is the recipient of the prestigious Hitachi 'Research and Development award' in 2016 for the development of a new concept of quantum computer based on conventional silicon technology

Giuseppe Iannaccone

Giuseppe Iannaccone is professor of electronical engineering at the University of Pisa. He is Fellow of the Institute of Electrical and Electronics Engineers and Fellow of the American Physical Society. His interests include electron devices, nanopower circuit design for RFID and smart systems applications. G.Iannaccone has coordinated European and National Projects involving multiple partners (NANOTCAD (FP5), DEWINT (ESF Collaborative Project)), and has acted as principal investigator in several research projects funded by public agencies at the European and National level, and by private organizations. G.I. has authored and co-authored more than 200 papers published in peer-reviewed journals and more than 130 papers in proceedings of international conferences, gathering more than 4000 citations on Scopus (more than 10K on Google Scholar). G.I. received the M.S. and Ph.D. degrees in EE from the University of Pisa in 1992 and 1996.

Montserrat Nafría

Montserrat Nafría received the Ph.D. degree in Physics from the Universitat Autonoma de Barcelona, Spain, in 1993, where she is currently a Full Professor at the Department of Electronic Engineering. Her major research interests include CMOS device and circuit reliability. Currently, she is working on the characterization and modelling of the aging (BTI and channel hot carrier degradations) and variability of advanced MOS devices. This is done from the nanoscale level, by studying the phenomena using Atomic Force Microscope-related techniques, up to circuit level, by developing models for circuit simulators that account for the time-dependent variability of the devices. She is also interested in the characterization and modelling of Resistive RAM and graphene-based devices. She is the author or coauthor of more than 250 research papers in scientific journals and conferences in all these fields.

Francisco Gámiz

Francisco Gamiz received his B.S. degree in PHYSICS in 1991, and his Ph.D. degree in 1994 from the University of Granada, both with Honors (Best Student Award). Since 1991 he has been working on the study of the transport properties in semiconductor heterostructures. His current research interests include the study of silicon-on-insulator devices, quantum transport and memory effects, graphene and pseudoMOS based sensors, and TMDs, MXenes and van der Waals heterostructures. In 1999 he was Visiting Researcher at the IBM T.J. Watson Research Center (USA). He has also has developed several research visits at MINATEC in Grenoble(France) and TU-Wien (Austria). Since 2005, he is Full Professor of Electronics, and since 2008, Head of the Nanoelectronics and Graphene Research Labs. He was co-ordinator of FP6- EUROSOI and FP7-EUROSOI+ projects, and has participated in FP6-SINANO and FP7- NANOSIL Networks of Excellence, and in REACHING-22 project, awarded with Catrene Label, and leaded by STMicroelectronics and CEA-LETI. In H2020, Prof. Gamiz is coordinator of REMINDER European project, and participates in ECSEL-WAYTOGO-FAST project.

He has co-authored more than 350 refereed papers in major journal and international conference proceedings, several book chapters, and he is co-holder of several international patents related to multi-body 1T-DRAM. His publications have received more than 4400 cites (h-index=35). Prof. Gamiz has given more than 20 invited conferences about nanoelectronics all over the World. Since 2007 Prof.Gamiz has managed international, national and regional projects with a total funding above 6M€. Using this funding, Prof. Gamiz has leaded the set up of the Laboratory of Nanoelectronics, Graphene and 2D semiconductors. Prof.Gamiz is Senior Member of the Electron Device Society of the Institute of Electrical & Electronic Engineers of USA. He is member of different Steering Committees of International Conferences such as European Solid State Device Research Conference, European Silicon-on- Insulator Technology Workshop, SOI Symposium of the Electrochemical Society (USA) and VLSI-TSA Conference in Taiwan.

Javier Mateos

Javier Mateos was born in Salamanca, Spain, in 1970. He has been with the Department of Applied Physics, University of Salamanca, since 1993, where he became Full Professor in 2017. He was coordinator of the EU project ROOTHz aiming at fabricating THz emitters and detectors using semiconductor nanodevices. His present research interests also include the development of novel device concepts using ballistic transport and HEMTs based in both narrow and wide bandgap III–V semiconductors. He has authored or co-authored almost 150 refereed scientific journal papers and 200 conference contributions and is currently an Associate Editor of the IEEE TRANSACTIONS OF ELECTRON DEVICES.

Rodrigo Picos

Rodrigo Picos (S'98) was born in Palma, Spain, in 1973. He received the Bachelor, Master,and Ph.D. degrees in physics from the University of Balearic Islands, Spain, in 1996, 1998 and 2006, respectively.

Since 2002, he has been teaching Electronics in the Department of Physics, University of Balearic Islands, Spain. He is currently Associate Professor of the Physics Department. His research interests include: design, test and diagnosis of integrated circuits and systems (analog, mixed-signal, RF), device modeling, and electronic instrumentation. He is actively involved in educational and research projects and he is the author or co-author of more than 100 scientific papers in international journals and conference proceedings.

Dr. Picos is a member of the Spanish Physics Society, and a Senior member of the IEEE Electron Devices Society (EDS).

Sorin Cristoloveanu

Sorin Cristoloveanu received the PhD (1976) in Electronics and the French Doctorat ès-Sciences in Physics (1981) from Grenoble Polytechnic Institute, France. He is currently Director of Research CNRS. He also worked at JPL (Pasadena), Motorola (Phoenix), and the Universities of Maryland, Florida, Vanderbilt, Western Australia, and Kyungpook (World Class University project). He served as the director of the LPCS Laboratory and the Center for Advanced Projects in Microelectronics, initial seed of Minatec center. He authored more than 1,100 technical journal papers and communications at international conferences (including 170 invited contributions). He is the author or the editor of 36 books, and he has organized 35 international conferences. His expertise is in the area of the electrical characterization and modeling of semiconductor materials and devices, with special interest for silicon-on-insulator structures. He has supervised more than 100 PhD completions. He is the recipient of the IEEE Andy Grove award 2017. With his students, he has received 17 Best Paper Awards, an Academy of Science Award (1995), and the Electronics Division Award of the Electrochemical Society (2002). He is a Fellow of IEEE, a Fellow of the Electrochemical Society, a Distinguished Lecturer of the Electron Device Society, and Editor of Solid-State Electronics.

Wladek Grabinski

Wladek Grabinski received the Ph.D. degree from the Institute of Electron Technology, Warsaw, Poland, in 1991. From 1991 to 1998 he was a Research Assistant at the Integrated Systems Lab, ETHZ, Switzerland, supporting the CMOS and BiCMOS technology developments by electrical characterization of the processes and devices. From 1999 to 2000, he was with LEG, EPFL, and was engaged in the compact MOSFET model developments supporting numerical device simulation and parameter extraction. Later, he was a technical staff engineer at Motorola, and subsequently at Freescale Semiconductor, Geneva Modeling Center, Switzerland. He is now an consultant responsible for modeling, characterization and parameter extraction of MOST devices for the IC design. He is currently consulting on the development of next-generation compact models for the nanoscaled technology very large scale integration (VLSI) circuit simulation. His current research interests are in highfrequency characterization, compact modeling and its Verilog-A standardization as well as device numerical simulations of MOSFETs for analog/RF low power IC applications. He is an editor of the reference modeling book Transistor Level Modeling for Analog/RF IC Design and also authored or coauthored more than 50 papers. Wladek is the chair of the ESSDERC Track4: "Device and circuit compact modeling" as well as has served as a member of organization committee of ESSDERC/ESSDERC, TPC of SBMicro, SISPAD, MIXDES Conferences; reviewer of the IEEE TED, IEEE MWCL, IJNM, MEE, MEJ. He is a Member At Large of Swiss IEEE ExCom and also supports the EPFL IEEE Student Branch acting as its Interim Branch Mentor. Wladek is involved in activities of the MOS-AK Association and serves as a coordinating manager since 1999.

Jamal Deen

Prof. M. Jamal Deen is Distinguished University Professor, Senior Canada Research Chair in Information Technology, and Director of the Micro- and Nano-Systems Laboratory, McMaster University. His current research interests are nanoelectronics, optoelectronics, nanotechnology, data analytics and their emerging applications to health and environmental sciences. Dr. Deen’s research record includes more than 560 peer-reviewed articles (about 20% are invited and with an h-index of 57), two textbooks on “Silicon Photonics- Fundamentals and Devices” and” Fiber Optic Communications: Fundamentals and Applications”, 12 awarded patents of which 6 were extensively used in industry, and 18 best paper/poster/presentation awards. Over his career, he has won more than fifty-five awards and honors.

As an undergraduate student at the University of Guyana, Dr. Deen was the top ranked mathematics and physics student and the second ranked student at the university, winning the Chancellor’s gold medal and the Irving Adler prize. As a graduate student, he was a Fulbright-Laspau Scholar and an American Vacuum Society Scholar. He is a Distinguished Lecturer of the IEEE Electron Device Society for more than a decade. His awards and honors include the Callinan Award as well as the Electronics and Photonics Award from the Electrochemical Society; a Humboldt Research Award from the Alexander von Humboldt Foundation; the Eadie Medal from the Royal Society of Canada; McNaughton Gold Medal (highest award for engineers), the Fessenden Medal and the Ham Education Medal, all from IEEE Canada IEEE Canada In addition, he was awarded the four honorary doctorate degrees in recognition of his exceptional research and scholarly accomplishments, professionalism and service. Dr. Deen has also been elected Fellow status in ten national academies and professional societies including The Royal Society of Canada - The Academies of Arts, Humanities and Sciences (the highest honor for academics, scholars and artists in Canada), IEEE, APS (American Physical Society) and ECS (Electrochemical Society). He served as the elected President of the Academy of Science, The Royal Society of Canada in 2015-2017 and is now serving as the Past President.

Lluís F. Marsal

Prof. Lluis F. Marsal is Distinguished Professor at the University Rovira i Virgili since 2017. He received the Ph.D. degree in physics from the University Politecnica de Cataluña, Spain in 1997. Since 2009, he is full professor at the Department of Electronic, Electric and Automatic Engineering, Engineering of the Universitat Rovira i Virgili, Spain. Between 1998 and 1999, he was a postdoctoral researcher at the Department of Electrical and Computer Engineering, University of Waterloo, Canada.

He has more than 25 years' experience in research and teaching in optoelectronics, photonics and nanotechnology. He has successfully created and led NEPHOS, an interdisciplinary research group in nanotechnology, optoelectronics and photonic devices based on micro-nanoporous materials and organic and hybrid materials. He received a 2014 UniSA Distinguished Researcher Award from the University of South Australia (UniSA) and the 2014 ICREA Academia Award from the Generalitat of Catalunya. Since 2013, he is the Chair of Spain Chapter of the IEEE Electron Devices Society. He is a senior member of the Institute of Electrical and Electronics Engineers and of the Optical Society of America. Dr. Marsal serves as a member of the Distinguished Lecturer program of the Electron Devices Society.

He has been member of advisory and technical committees in several International and national and has been visiting professor at several universities and research institutions (CINVESTAV - Instituto Politécnico Nacional, Mexico, McMaster University, Canada, ICMM-CSIC, BiomaGUNE, Spain, Mawson Institute, Australia). He has co-authored more than 200 publications in international refereed journals and conferences, 2 books, 5 book chapters and holds three patents. He has presented over 25 invited lectures in international conferences and has participated in over than 80 national and international projects.

Yvan Bonnassieux


Yvan BONNASSIEUX is currently professor of the Ecole polytechnique (France) and deputy manager of laboratory LPICM “laboratory of the interface and thin Layers physics”. Former student of the ENS of Cachan he receives is PhD in 1998 and HDR in 2011. His current research themes include compact modelling, design and the characterization of components and circuits of organic and large area electronics. He as been invited professor at Columbia university,USA in 2015 and since 2016 invited professor in NAIST, Japan. He is author or joint author of more than 80 publications in scientific magazines, 120 communications in international conferences and of 4 patents.


Sourabh Khandelwal

Dr. Sourabh Khandelwal is an Assistant Prof at the School of Engineering, Macquarie University, Sydney, Australia. He is the lead developer of new industry standard ASM-GaN compact model for Gallium Nitride RF and power devices. This model has been chosen as a standard by a world-wide industry standardization committee consisting of more than 30 leading semiconductor companies after seven years of highly competitive selection process. Prior to joining Macquarie, he was manager of Berkeley Device Modeling Center and postdoctoral researcher at the University of California Berkeley where he developed models which are adopted in industry standard BSIM models. Before that, he worked as a research engineer at IBM Semiconductor Research. At IBM he worked on RF silicon-on-insulator device modeling and circuit design.  He has published 1 book, 1 patent and over 100 research articles in top-tier conferences and journals in the area of semiconductor device modeling and circuit design. He is an associate editor of IEEE Access journal and serves as reviewer of several IEEE journals and conferences. 

Elena Gnani

Elena Gnani received the M.S. degree in Electrical Engineering “summa cum laude” and the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled “Physical models for MOS nanostructures”, both from the University of Bologna. In 2014 she became Associate Professor at the University of Bologna where she is involved in research activities concerning the physics, modeling, design and the characterization of advanced CMOS, beyond-CMOS transistors, quasi ballistic transport in nanoMOSFETs, and carrier injection in non-volatile memory cells. She was involved in several European Projects and has been the principal investigator in the research projects Futuro in Ricerca (FIRB 2010) “Novel device and circuit concepts for energy-efficient” funded by the Italian Ministry of University. Her research activities have been carried out in cooperation with worldwide semiconductor research centers and semiconductor industries, including EPFL di Losanna (Switzerland), Forschungszentrum Jülich (Germany), CEA-LETI di Grenoble (France), IBM Zurigo, ETHZ Zurigo (Switzerland), Institute of Microelectronics (IME) di Singapore, Infineon Technologies AG, KTH Royal Institute of Technology (Sweden), IHP - Innovations for High Performance Microelectronics (Germany), ST-Microelectronics (France) e Texas Instruments (USA). E. Gnani is author or co-author of more than 180 papers published in referred international journals and in proceedings of major international conferences, and of several invited contributions.


Ahmed Nejim

Ahmed Nejim obtained his PhD in 1990 in Ion-Solid interaction. A wide experience in ion implantation and semiconductor processing was obtained in 17 years of research in material science, semiconductor physics and microelectronic design. Experience in lecturing, mentoring and facility management. 15 years of technical project management, European multinational projects, Liaison research fellow of a UK national research facility in contact with national industry and national and international academia. Since 2001 he has been working at Silvaco supporting TCAD software users and developing collaborative projects. He acts as an R&D Project Manager for Silvaco Europe.

Dr. Slobodan Mijalkovi

Dr. Slobodan Mijalkovic is a Senior R&D Engineer at Silvaco Europe in Cambridge (UK), specialized in modeling for computer-aided design on process, device and circuit  level. Before joining Silvaco Europe, he was a Principal Researcher in HiTeC Laboratory at Delft University of Technology in the Netherlands, where he led a team for standardization of the Mextram bipolar transistor model with Compact Model Coalition (CMC). Formerly, he was Assistant and  Associate Professor with the Department of Microelectronics at Faculty of Electronics Engineering, University of Nis in Serbia. Dr. Mijalkovic has authored more than 80 publications and a monograph “Multigrid Methods for Process Simulation” in the Springer book series “Computational Microelectronics”.  He has set and chaired four editions of “Compact Modeling for RF Application (CMRF)” workshops that strongly contributed to the acceptance of Verilog-A as a standard compact modeling language. He is a senior Member of IEEE and currently a member of IEEE EDS Compact Modeling Committee.

Thomas Gneiting

Dr. Thomas Gneiting is founder and managing director of AdMOS, a company which is focused on modeling, simulation and design support which is located in the area of Stuttgart/Germany. He studied Production Technology and Computer Science at the University of Applied Sciences in Esslingen and received his PhD degree in Electrical Engineering from Brunel University of West London in 1997. 

Firas Mohamed

Dr Firas is General Manager of Silvaco France. Firas has over twenty three years experience in EDA industry. The beginning was by developing a complete model-based test & diagnosis system for analog and mixed-signal circuits during his Ph.D years. A major step of his career was in 2005 where he was Prizewinner of the French National Competition rewarding innovative technologies, which led him to the creation of Infiniscale S.A. that he served as President & CEO until its acquisition by Silvaco Inc. end 2015. Firas started his professional career at Mentor Graphics with spice simulation team, he was also in charge of modeling and optimization environments. In 2000, Firas took over CAD core technology development department of MEMSCAP S.A.

Firas holds computer science engineer degree from HIAST, the Higher Institute of Applied Sciences and Technology of Damascus and a PhD in Microelectronics from INPG, the National Polytechnic Institute of Grenoble in France.

Dr Radu Sporea

Dr Radu Sporea is a Lecturer in Semiconductor Devices at the Advanced Technology Institute (ATI), University of Surrey. Prior to this appointment he was Royal Academy of Engineering Academic Research Fellow (2011-2016), EPSRC PhD+ Fellow (2010-2011) and PhD researcher (2006 - 2010) in the same centre.

After studying Computer Systems Engineering at “Politehnica” University, Bucharest, Romania, Radu was a Design Engineer for Catalyst Semiconductor Romania, now part of ON Semiconductor, where de developed ultra-low-power analog CMOS circuits. His PhD thesis focused on polysilicon source-gated transistors, a class of thin-film devices with benefits in low-power, high gain applications.

Current research includes manufacturability and reliability of large-area, efficient TFT circuits, smart living spaces, digital-physical interactions and modelling of advanced semiconductor structures. In 2014 Radu was identified as a Rising Star by the EPSRC, the Research Council funding Engineering and Physical Sciences research. Radu was the University of Surrey’s Early Career Teacher of the Year in 2017.

Benjamin Iñiguez

Benjamin Iñiguez obtained the B. S., M. Sc. and the Ph D in Physics in 1992, 1993 and 1996, respectively, from the Universitat de les Illes Balears (UIB), Spain from February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV, Tarragona) as a Titular Professor, and in February 2010 he became Full Professor at the same university.
He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (from ICREA Institute in Catalonia, Spain) in 2009 and 2014. He has published more than 120 research papers in international journals and more than 100 papers in proceedings of conferences. He has led one European Unión-funded project about compact modeliong of nanoelectronic devices and is currently leading one Project about compact modelling of Thin-Film Transistors (TFTs). He has participated as URV team leader in five more European Unión-funded projects and in two research contracts with Silvaco Inc.

He is IEEE Senior Member since 2003 and Distinguished Lecturer since 2004.

He has been Vice-Chair of EDS Región 8. Sincé August 2016 he is Associate Editor of IEEE Transactions on Electron Devices, and since January 2017 he is the Chair of the Compact Modelling Technical Committee of EDS. In December 2017 he was elected EDS BoG Member at Large.

His current research interests are compact modelling of advanced electron devices (in particular, TFTs, GaN FETs and nanoscale MOS structures), parameter extraction techniques and semiconductor device physics and electrical characterization.